| PART |
Description |
Maker |
| AT24C08A AT24C16A AT24C02A AT24C04A AT24C02AY1-10Y |
Write Protect Pin for Hardware Data Protection
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08
|
ATMEL Corporation
|
| AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28
64K 8K x 8 CMOS E2PROM
8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85
64K EEPROM with 64-Byte Page & Software Data Protection
64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
From old datasheet system
64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| SLE4428C SLE4428M2.2 SLE4418M2.2 SLE4418 SLE4418C |
16MM PB 65168-010 1K X 8 3-WIRE SERIAL EEPROM, UUC8
ICs for Chip Cards 1K X 8 3-WIRE SERIAL EEPROM, UUC8
Intelligent 8-Kbit(1024 x 8-bit) EEPROM With Write Protection Function(智能8K1024 x 8 EEPROM) 智能8千位024 × 8位）具有写保护功能的EEPROM（智能化8K的位024 × 8位）的EEPROM
Intelligent 8-Kbit(1024 x 8-bit) EEPROM With Write Protection Function(智能K1024 x 8 EEPROM（带些保护功能）)
Intelligent 8-Kbit(1024 x 8-bit) EEPROM With Write Protection Function(智能K1024 x 8 EEPROM)
ICs for Chip Cards / Intelligent 8-Kbit EEPROM
SERIAL EEPROM,1KX8,MOS,WAFER,PLASTIC
SERIAL EEPROM,1KX8,MOS,MODULE,8PIN,PLASTIC
From old datasheet system
|
SIEMENS AG
Infineon Technologies AG
SIEMENS[Siemens Semiconductor Group]
|
| CAT24WC66WE-1.8-GT2C CAT24WC66WE-1.8-GT3C CAT24WC6 |
64-Kb I2C Serial EEPROM with Partial Array Write Protection
|
http://
ON Semiconductor
|
| CAT24C03WI-GT3 CAT24C03LI-3 CAT24C03LI-G CAT24C03L |
2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection
|
CATALYST[Catalyst Semiconductor]
|
| AT28HC64B08 AT28HC64B-90PI AT28HC64B-90JI AT28HC64 |
64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
| W19B160BTT7H |
2.7~3.6-volt write (program and erase) operations, Fast write operation
|
Winbond
|
| MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| BH6627FS |
Magnetic Disk LSIs > FDD read/write amplifier
Read /Write amplifier for FDD
Read / Write Amplifier for FDD(FDD的读/写放大器)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| SSI32R511-8F SSI32R516-6CH SSI32R516-6CL SSI32R516 |
4-Channel Disk/Tape Read/Write Circuit
8-Channel Disk Read/Write Circuit 8通道磁盘写电
6-Channel Read/Write Circuit 6通道写电
|
API Delevan
|
